Protective coating for dielectric material on wafer support used

Coating apparatus – Gas or vapor deposition – Work support

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361234, 269 8, C23C 1600, B25B 1100, H01H 300, H01G 300

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active

055607802

ABSTRACT:
Improvements in a wafer support apparatus used for electrostatic clamping of a wafer to the wafer support, and a method of making same, are disclosed wherein a dielectric material, formed on the surface of a wafer support facing the wafer to facilitate the electrostatic clamping, has a protective coating formed over the dielectric material to provide protection to the dielectric material against chemical attack from chemicals used during the processing of the semiconductor wafer. In a preferred embodiment, the protective coating comprises an aluminum compound, such as an oxide of aluminum or aluminum nitride, having a thickness ranging from about 1 micron to about 30 microns, but not exceeding about 50% of the thickness of the dielectric material so as to not interfere with the electrostatic charge used for clamping the wafer to the wafer support.

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