Protective circuit for semiconductor integrated circuit

Details Protective circuit for semiconductor integrated circuit Protective circuit for semiconductor integrated circuit

1996-01-16

1997-11-18

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257360, 257361, 257362, H01L 2362

Patent

active

056891326

ABSTRACT:
A protective circuit for a semiconductor integrated circuit having a MOS transistor is constructed of a protective device having a first conducting type of protective device region provided in the surface of a substrate and a second conducting type of first diffused part and second diffused part provided in the surface of the protective device region. The first diffused part is connected to a power line of the MOS transistor, and the second diffused part is connected to a signal line between an external input terminal and the MOS transistor. The bipolar operation of the protective device allows electric charge accumulated in the power line to be discharged from the external input terminal, and also allows electric charge accumulated in the external input terminal to be discharged from the power line. Accordingly, the occurrence of electrostatic breakdown in the semiconductor integrated circuit can be prevented.

REFERENCES:
patent: 4821096 (1989-04-01), Maloney

Affiliated with

Also associated with

Rating

Protective circuit for semiconductor integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Protective circuit for semiconductor integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Protective circuit for semiconductor integrated circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1568179