Protection of semiconductor substrates during epitaxial growth p

Details Protection of semiconductor substrates during epitaxial growth p Protection of semiconductor substrates during epitaxial growth p

1982-06-25

1984-11-13

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG89, C30B 1906

Patent

active

044824238

ABSTRACT:
Thermal degradation of compound single crystal substrates (e.g., InP) containing a relatively volatile element (e.g., P) prior to LPE growth has been virtually eliminated by an improved protection technique. A partial pressure of the volatile element is provided by a solution (e.g., Sn-In-P) localized inside a chamber which is external to the LPE boat and which surrounds substrate prior to growth, thereby preventing thermal damage to the substrate surface. Applicability of the technique to other epitaxial growth processes (e.g., VPE and MBE) is also discussed.

REFERENCES:
patent: 4227962 (1980-10-01), Antypas
Jap J. of Appl. Phys., vol. 18, No. 9, pp. 1859-1860, 1979.
Casey et al., Appl. Phys. Lett., vol. 30, No. 5, pp. 247-249, 1977.
Wrick et al., Electronics Letters, vol. 12, No. 16, pp. 394-395, 1976.
DiGiuseppe, J. of Crystal Growth, vol. 58, pp. 279-284, 1982.
Antypas, Appl. Phys. Lett., vol. 37, No. 1, pp. 64-65, 1980.
Dol et al., Appl. Phys. Lett., vol. 34, No. 6, pp. 393-395, 1979.
Clawson et al., J. of Crystal Growth, vol. 46, pp. 300-303, 1979.

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