Protection in integrated circuits

Details Protection in integrated circuits Protection in integrated circuits

2002-08-29

2009-02-24

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S437000, C438S761000, C438S763000, C438S788000, C257SE21549, C257SE21267

Reexamination Certificate

active

07494894

ABSTRACT:
A method including, prior to a plasma heat-up operation, forming a liner on a structure coated with an insulator. And a method including forming a trench on a substrate, forming an insulator on the trench, and after forming a liner having a thickness of between about 50 angstroms and about 400 angstroms on the insulator, applying a plasma heat-up operation to the substrate.

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