Protection in integrated circuits

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material

Reexamination Certificate

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C438S437000, C257SE21546

Reexamination Certificate

active

07632737

ABSTRACT:
A method including, prior to a plasma heat-up operation, forming a liner on structure coated with an insulator. And a method including forming a trench on a substrate, forming an insulator on the trench, and after forming a liner having a thickness of between about 50 angstroms and about 400 angstroms on the insulator, applying a plasma heat-up operation to the substrate.

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