Protection from short circuits between P and N wells

Details Protection from short circuits between P and N wells Protection from short circuits between P and N wells

1994-12-01

1997-07-22

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257357, 257369, 257355, 257546, H01L 2976, H01L 2994

Patent

active

056506570

ABSTRACT:
A method of manufacture of a MOSFET device with a predetermined light positive or negative doping comprises forming a first mask upon said substrate. Dopant of a predetermined positive or negative variety is implanted through the mask. A second mask is formed over the openings in the first mask. The first mask is removed. Dopant of the opposite positive or negative variety is implanted into the openings in the second mask. The process forms a pattern of positive and negative wells in the substrate, and forms a guard ring of an opposite doping variety from the wells being protected formed in the substrate.

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VLSI Technology, McGraw Hill Book Co. NY. NY. by SMSZE, pp. 486-491.

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