Protection element and method of manufacturing same

Details Protection element and method of manufacturing same Protection element and method of manufacturing same

1991-08-06

1993-07-06

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257546, 257384, H01L 2906, H01L 2978, H01L 2702

Patent

active

052258963

ABSTRACT:
A semiconductor device comprises a semiconductor body (1) of silicon having a monolithic integrated circuit with a field oxide pattern (2) having at least one protection element (T2) having at least one active zone (4) of a first conductivity type, which adjoins at least in part the field oxide (2) and forms with the adjoining silicon region (5) of the second opposite conductivity type a pn junction (6). The active zone (4) is contacted with an electrode layer (7), which is connected to a point (G) of the semiconductor device to be protected against static discharge. The electrode layer (7) consists of a metal silicide. According to the invention, the metal silicide (7) also extends onto the field oxide (2) adjoining the active zone (4) over a certain distance, which is preferably at least 0.5 .mu.m.

REFERENCES:
patent: 4675073 (1987-06-01), Douglas
patent: 4697199 (1987-09-01), De Graaf et al.
patent: 4860086 (1989-08-01), Nakamura et al.
patent: 4874717 (1989-10-01), Neppl et al.
patent: 4927775 (1990-05-01), Alvarez et al.

Affiliated with

Also associated with

Rating

Protection element and method of manufacturing same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Protection element and method of manufacturing same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Protection element and method of manufacturing same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1693901