Protection diode for improved ruggedness of a radio...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S342000, C257S327000, C257S168000, C257S199000, C257S367000, C257S583000, C257S345000, C257S349000, C257S355000, C257S373000, C257S376000, C438S282000, C438S298000, C438S910000, C438S140000

Reexamination Certificate

active

06917077

ABSTRACT:
A semiconductor arrangement including:a substrate having a substrate layer (13) with an upper and lower surface, the substrate layer (13) being of a first conductivity type;a first buried layer (12) in the substrate, extending along said lower surface below a first portion of said upper surface of said substrate layer (13), and a second buried layer (12) in the substrate, extending along said lower surface below a second portion of said upper surface of said substrate layer (13);a first diffusion (26) in said first portion of said substrate layer (13), being of a second conductivity type opposite to said first conductivity type and having a first distance to said first buried layer (12) for defining a first breakdown voltage between said first diffusion (26) and said first buried layer (12);a second diffusion (45) in said second portion of said substrate layer (13), being of said second conductivity type and having a second distance to said second buried layer (12) for defining a second breakdown voltage between said second diffusion (45) and said second buried layer (12);said first distance being larger than said second distance such that said first breakdown voltage is larger than said second breakdown voltage.

REFERENCES:
patent: 4344081 (1982-08-01), Pao et al.
patent: 4979001 (1990-12-01), Alter
patent: 5300451 (1994-04-01), Zambrano
patent: 5410177 (1995-04-01), Harmel et al.
patent: 5751052 (1998-05-01), Heminger et al.
patent: 0387836 (1990-03-01), None
patent: WO9717726 (1995-11-01), None

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