Protection circuit which prevents avalanche breakdown in a fet b

Details Protection circuit which prevents avalanche breakdown in a fet b Protection circuit which prevents avalanche breakdown in a fet b

1994-12-02

1996-07-23

Westin, Edward P.

Electronic digital logic circuitry

Signal sensitivity or transmission integrity

Bus or line termination

361 56, 361 91, 257361, H02H 904

Patent

active

055393276

ABSTRACT:
A transistor circuit comprises a MOS transistor with an open back gate, and control means for controlling a voltage to be applied to the control gate of the MOS transistor, whereby the control means controls the avalanche breakdown voltage of a parasitic bipolar transistor formed by the drain, back gate and source of the MOS transistor.

REFERENCES:
patent: 4789917 (1988-12-01), Miller
patent: 4829350 (1989-05-01), Miller
patent: 4924339 (1990-05-01), Atsumi et al.
patent: 5086365 (1992-02-01), Lien
patent: 5389811 (1995-02-01), Poucher et al.
Publication, "Physics and Technology of Semiconductor Devices", A. S. Grove (John Wiley and Sons, Inc., 1976, pp. 231-233.

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