Protection circuit located under fuse window

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections

Reexamination Certificate

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Details

C257S528000, C257S529000, C327S525000

Reexamination Certificate

active

07098491

ABSTRACT:
A semiconductor device having a fuse window above a substrate, the semiconductor device has at least one fuse protection circuit located under the fuse window. The fuse protection circuit includes a fuse having a first end connected to a first voltage and a second end. A first transistor having a drain is connected to the second end of the fuse, a gate for receiving an input signal, and a source is connected to a second voltage. A second transistor having a drain is connected to the second end of the fuse, a gate, and a source is connected to the second voltage. A first diode having an anode and a cathode, the anode of the first diode is connected to the second voltage and the cathode of the first diode is connected to the second end of the fuse.

REFERENCES:
patent: 5652689 (1997-07-01), Yuan
patent: 5729041 (1998-03-01), Yoo et al.
patent: 6157065 (2000-12-01), Huang et al.
patent: 6266290 (2001-07-01), Sredanovic et al.
patent: 6268760 (2001-07-01), Marshall et al.
patent: 6570433 (2003-05-01), Aipperspach et al.
patent: 6728158 (2004-04-01), Takahashi et al.
patent: 6867441 (2005-03-01), Yang et al.
patent: 2003/0094995 (2003-05-01), Mori et al.

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