Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure
Patent
1998-05-01
2000-04-11
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Plural non-isolated transistor structures in same structure
257565, 257557, 257370, 257546, 257355, 257382, H01L 27082, H01L 2900, H01L 27102, H01L 2970
Patent
active
060491191
ABSTRACT:
A semiconductor device having a substrate with a first conductivity type. The substrate has a top substrate region that also has the first conductivity type. A first doped region, a second doped region and a third doped region are located in the top substrate region where the first and second doped regions have a second conductivity type opposite the first conductivity type while the third doped region has the first conductivity type and where the third doped region is between the first and second doped regions. A doped well region is also in the top substrate region and has the second conductivity type and has the second doped region and at least a portion of the third doped region located therein. A method of forming the device is also provided herein.
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Fenty Jesse A.
Motorola Inc.
Saadat Mahshid
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