Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-01
2007-05-01
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S355000, C257S356000, C257S357000, C257S358000, C257S359000, C257S361000, C257S341000
Reexamination Certificate
active
09809856
ABSTRACT:
A protection circuit device using a MOSFET has a plural of conductive paths separated electrically, a MOSFET chip integrating two power MOSFETs in one chip where a gate electrode and a source electrode are fixed on the desired conductive path, conductive material provided on a common drain electrode of the MOSFET, and insulating resin covering said MOSFET and supporting said conductive path in one body. Removing a drawing-around of the common drain electrode and fixing the source electrode directly on the conductive path, low ON-state resistance is realized.
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Etou Hiroki
Fukuda Hirokazu
Kobayashi Yoshiyuki
Sakamoto Noriaki
Takahashi Kouji
Loke Steven
Sanyo Electric Co,. Ltd.
Vu Quang
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