Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-05-03
1996-05-07
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257362, 257591, 257497, 361 90, 361 68, H01L 2362
Patent
active
055148948
ABSTRACT:
A protection circuit structure for an internal semiconductor integrated circuit. The protection circuit structure includes a first protection circuit having at least a first input pin and a first discharge pin, a second protection circuit having at least a second input pin and a second discharge pin and a switching device connecting between the first and second protection circuits. The switching device is biased by a potential difference between the first and second discharge pins. The switching device permits operating one of the first and second protection circuits to accomplish a discharge in replacement of an inoperative first or second discharge pin. The switching device takes the ON state when biased by a predetermined voltage or higher which interrupts the internal semiconductor integrated circuit. The switching device connects between wiring lines which respectively connect to the first and second discharge pins.
REFERENCES:
patent: 4952994 (1990-08-01), Lin
patent: 5027250 (1991-06-01), Cini et al.
patent: 5061649 (1991-10-01), Takenouchi et al.
patent: 5200876 (1993-04-01), Takeda
Guay John
Jackson, Jr. Jerome
NEC Corporation
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