Protection circuit against electrostatic discharges

Details Protection circuit against electrostatic discharges Protection circuit against electrostatic discharges

1995-08-03

1997-12-16

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257357, 257360, 257365, 257173, 257174, 257363, 257546, H01L 2362

Patent

active

056988869

ABSTRACT:
A protection circuit against the electrostatic discharges that could appear at the terminals of a circuit, wherein said protection circuit comprises a first transistor made in a well whose potential is a floating potential and enabling the value of the discharge voltage to be limited to a value equal to minus the value of the threshold voltage of said first transistor and a second transistor made in a well whose potential is a floating potential and enabling the value of the discharge voltage to be limited to a value equal to the value of the threshold voltage of said second transistor. The disclosure can be applied to MOS technology integrated circuits.

REFERENCES:
Proceedings of the IEEE Custom Integrated Circuits Conference, May 1988, pp. 27.2.1-27.2.4, May 1988, Author: Q. Say.
Proceedings of the IEEE 1988 Custom Integrated Circuits Conference, "Resistorless ESD Protection Device for High Speed CMOS Circuits", Q. Say. New York, USA, May 1988, pp. 27.2.1-27.2.4.
Patent Abstracts Of Japan, vol. 4, No. 165 (E-034), 15 Nov. 1980, and JP-A-55 113 359 (Fujitsu) 1 Sep. 1980.

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