Protection circuit

Details Protection circuit Protection circuit

2005-07-12

2005-07-12

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Powering

C327S534000, C361S111000

Reexamination Certificate

active

06917554

ABSTRACT:
A protection circuit that permits the use of thin oxide transistor devices. In one embodiment, the circuit is used to protect internal nodes of a flash EEPROM chip from a power pad voltage. A thin oxide device can be used to directly couple the power pad to an internal node of the flash chip. Optionally, thin oxide devices can also be used to set the steady state internal node voltage and a current source can be coupled to the node to bleed sub-threshold current. In yet another embodiment, a pull down circuit is coupled to the node to pull the node immediately down to a desired steady state voltage when the EEPROM algorithm is completed.

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Schematic “HVP21LC.1,” (Jan. 24, 1997), corresponding to a circuit believed to have been incorporated in a product publicly distributed prior to Jan. 2, 2002 (1 page).

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