Fences – Flood
Reexamination Certificate
2005-11-01
2005-11-01
Huynh, Andy (Department: 2818)
Fences
Flood
C257S002000, C257S016000, C257S052000, C257S325000, C257S646000
Reexamination Certificate
active
06959920
ABSTRACT:
A pre-metal dielectric structure of a SONOS memory structure includes a UV light-absorbing film, which prevents the ONO structure from being electronically charged in response to UV irradiation. In one embodiment, the pre-metal dielectric structure includes a first pre-metal dielectric layer located over the SONOS memory structure, a light-absorbing structure located over the first pre-metal dielectric layer, and a second pre-metal dielectric layer located over the light-absorbing structure. The light-absorbing structure can be a continuous polysilicon or amorphous silicon layer. Alternately, the light-absorbing structure can include one or more patterned polysilicon layers. In another embodiment, the SONOS transistors include UV light absorbing polysilicon spacers.
REFERENCES:
patent: 5168334 (1992-12-01), Mitchell et al.
patent: 6081456 (2000-06-01), Dadashev
patent: 6181597 (2001-01-01), Nachumovsky
patent: 6256231 (2001-07-01), Lavi
patent: 6410210 (2002-06-01), Gabriel
patent: 6440797 (2002-08-01), Wu et al.
patent: 6680509 (2004-01-01), Wu et al.
patent: 6765254 (2004-07-01), Hui et al.
patent: 6774432 (2004-08-01), Ngo et al.
patent: 2001-284563 (2001-12-01), None
“Mechanism of Charge Induced Plasma Damage to EPROM Cells During Fabrication of Integrated Circuits”, by C.K. Barlingay, R. Yach & W. Likaszek; 7thInt'l. Symposium on Plasma- and Process-Induced Damage, Jun. 2002, Hawaii.
“Avoiding Plasma Induced Damage To Gate Oxide With Conductive Top Film (CTF) on PECVD Contact Etch Stop Layer”, by S. Song et al., 2002 Symposium on VLSI Technology Digest of Technical Papers.
Aloni Efraim
Ben-Gigi Avi
Gutman Micha
Roizin Yakov
Vofsy Menachem
Bever Hoffman & Harms LLP
Hoffman E. Eric
Huynh Andy
Tower Semiconductor Ltd.
LandOfFree
Protection against in-process charging in... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Protection against in-process charging in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Protection against in-process charging in... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3475499