Protecting circuit for a semiconductor circuit

Details Protecting circuit for a semiconductor circuit Protecting circuit for a semiconductor circuit

1998-06-08

1999-11-02

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257355, 257365, 257173, 257546, H01L 2900, H01L 2362, H01L 2976, H01L 2974

Patent

active

059775947

ABSTRACT:
A protecting circuit is disclosed, that comprises a static electricity protecting means composed of a plurality of p channel type transistors, wherein a source electrode, a gate electrode, and a substrate electrode of a first p channel type transistor are connected to a high voltage power supply terminal, a drain electrode of a second p channel type MOS transistor being connected to a low voltage power supply terminal, a substrate electrode of the second p channel type substrate being connected to the high voltage power supply terminal, a drain electrode of the first p channel type transistor, a source electrode and a gate electrode of the second p channel type MOS transistor being connected to an external terminal and an internal circuit in common.

REFERENCES:
patent: 5272586 (1993-12-01), Yen
patent: 5321293 (1994-06-01), Mojaradi et al.
patent: 5698886 (1997-12-01), Thenoz et al.
patent: 5760630 (1998-06-01), Okamoto
patent: 5821797 (1998-10-01), Kinugasa et al.

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