Protect diodes for hybrid-orientation substrate structures

Details Protect diodes for hybrid-orientation substrate structures Protect diodes for hybrid-orientation substrate structures

2008-01-01

2008-01-01

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S357000, C257S360000

Reexamination Certificate

active

07315066

ABSTRACT:
A semiconductor structure and method for forming the same. The structure includes a hybrid orientation block having first and second silicon regions having different lattice orientations. The first silicon region is directly on the block, while the second silicon region is physically isolated from the block by a dielectric region. First and second transistors are formed on the first and second regions, respectively. Also, first and second doped discharge prevention structures are formed on the block wherein the first doped discharge prevention structure prevents discharge damage to the first transistor, whereas the second doped discharge prevention structure prevents discharge damage to the second transistor during a plasma process. During the normal operation of the first and second transistors, the first and second discharge prevention structures behave like dielectric regions.

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