Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-03-15
2005-03-15
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S909000, C438S935000
Reexamination Certificate
active
06867152
ABSTRACT:
A rapid vapor deposition (RVD) method conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant, low wet etch rate, low film shrinkage and low stress hysteresis, appropriate for various integrated circuit dielectric gap fill applications such as shallow trench isolation. The method includes the following two principal operations: depositing a thin conformal and saturated layer of aluminum-containing precursor over some or all of the substrate surface; and exposing the saturated layer of aluminum-containing precursor to a silicon-containing precursor gas to form a dielectric layer. In some cases, the substrate temperatures during contact with silicon-containing precursor are greater than about 250 degree Celsius to produce an improved film. In other cases, post-deposition anneal process may be used to improve properties of the film. Generally an inert gas purge is employed between the introduction of reactant gases to remove byproducts and unused reactants. These operations can be repeated to deposit multiple layers of dielectric material until a desired dielectric thickness is achieved.
REFERENCES:
patent: 6030881 (2000-02-01), Papasouliotis et al.
patent: 6335261 (2002-01-01), Natzle et al.
patent: 6503330 (2003-01-01), Sneh et al.
patent: 6511399 (2003-01-01), Mc Collum Etchason et al.
patent: 6511539 (2003-01-01), Raaijmakers
patent: 6540838 (2003-04-01), Sneh et al.
patent: 6551339 (2003-04-01), Gavronsky
patent: WO0227063 (2002-04-01), None
“Atomic Layer Deposition of Metal Oxide Thin Films,” A thesis presented by Dennis Michael Hausmann, Harvard University, 186 pages, Jul. 2002.
Hausmann et al., “Rapid Vapor Deposition of Highly Conformal Silica Nanolaminates,” Science, vol. 308, Oct. 2002, 5 Pages.
Hausmann Dennis M.
Juarez Francisco J.
Nie Bunsen
Pong Teresa
Tipton Adrianne K.
Beyer Weaver & Thomas LLP
Dang Phuc T.
Novellus Systems Inc.
LandOfFree
Properties of a silica thin film produced by a rapid vapor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Properties of a silica thin film produced by a rapid vapor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Properties of a silica thin film produced by a rapid vapor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3453800