Propagation of misfit dislocations from buffer/Si interface...

Details Propagation of misfit dislocations from buffer/Si interface... Propagation of misfit dislocations from buffer/Si interface...

2011-08-30

2011-08-30

Estrada, Michelle (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S481000, C438S514000, C257SE33023, C257SE33025, C257SE21085

Reexamination Certificate

active

08008181

ABSTRACT:
Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

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