Static information storage and retrieval – Read/write circuit – Testing
Patent
1989-12-14
1991-06-04
Popek, Joseph A.
Static information storage and retrieval
Read/write circuit
Testing
365185, 365104, G11C 700
Patent
active
050220080
ABSTRACT:
A method for measuring the access time or speed of PROM devices is described. The PROM (10) includes a matrix of erased memory cells (30-70) each selectable by an address, and readable by a sense amplifier (112). The method comprises providing an invalid address and reading the level at the sense amplifier (112). A valid address is then provided, and the memory cell addressed is read. The above steps are repeated until all memory cells are read. In this manner, the time required to access an erased memory cell after accessing a programmed memory cell, as simulated by a nonexistent memory cell, may be measured.
REFERENCES:
patent: 4441170 (1984-04-01), Folmsbee et al.
patent: 4577294 (1986-03-01), Brown et al.
patent: 4630241 (1986-12-01), Kobayashi et al.
patent: 4740925 (1988-04-01), Kaszubinski
patent: 4748597 (1988-05-01), Saito et al.
Schreck John F.
Truong Phat C.
Demond Thomas W.
Neerings Ronald O.
Popek Joseph A.
Sharp Melvin
Texas Instruments Incorporated
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