PROM IC enabling a stricter memory cell margin test

Details PROM IC enabling a stricter memory cell margin test PROM IC enabling a stricter memory cell margin test

1993-10-12

1996-10-01

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Testing

36518509, 36518911, G11C 2900

Patent

active

055616356

ABSTRACT:
A sense circuit includes a sense amplifier and a pull-up resistor circuit disposed on the input side of the sense amplifier. In response to a test selection signal, a read voltage applying circuit applies an external voltage to a selected memory cell and the total resistance of the resistor circuit is switched from a normal resistance to a smaller resistance for testing. Since the input side of the sense amplifier is pulled up through the resistor circuit with the resistance for testing, it is possible to detect the storage state of the selected memory cell under a stricter condition.

REFERENCES:
patent: 4612630 (1986-09-01), Rosier
patent: 4779272 (1988-10-01), Kohda et al.
patent: 5142495 (1992-08-01), Canepa

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