Projection exposure methods

Radiation imagery chemistry: process – composition – or product th – Registration or layout process other than color proofing

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430 30, G03F 900

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active

059940069

ABSTRACT:
An projection exposure apparatus and method for illuminating a transfer pattern and forming an image upon a mask for exposure from the illumination light and transfer exposing the image of the pattern of the mask under the illumination light. Switching is performed between a normal illumination condition and a modified illumination condition based upon the numerical aperture of the illumination light; wherein the normal illumination condition occurs when the light quantity distribution at the illumination pupil plane is in a first region, including the optical-axis; and the modified illumination condition occurs when the light quantity distribution at the illumination pupil plane is in a second region, not including the optical-axis and wherein the pupil plane is an optical Fourier conversion surface of a pattern surface of the mask in an illumination system.

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Shinichi Nakamura, et al., Image Quality of Higher NA i-line Projection Lens, SPIE vol. 1264, Optical/Laser Microlithography III (1990), pp. 84-93.
Hiroaki Kawata, et al., Optical Projection Lithography Using Lenses With Numerical Apertures Greater Than Unity, Microelectronic Engineering, May 9, 1989, nos. 1-4, Amsterdam, NL., pp. 31-36.
Daniel C. Cole et al., Extending Scalar Aerial Image Calculations to Higher Numerical Apertures, Journal of Vacuum Science & Technology B 10(6) Nov./Dec. 1992, New York, U.S., pp. 3037-3041.

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