Programming method of multi-bit flash memory device for...

Details Programming method of multi-bit flash memory device for... Programming method of multi-bit flash memory device for...

2011-03-08

2011-03-08

Tran, Andrew Q (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185120, C365S185110, C365S185030, C365S185090, C365S185170, C365S185330

Reexamination Certificate

active

07903467

ABSTRACT:
A method of programming a plurality of memory cells of a flash memory device by selectively changing a threshold voltage distribution thereof from a first distribution to a second distribution, the method includes selecting at least one of the memory cells to be programmed, and programming the at least one selected memory cell to a voltage higher than a verify voltage, wherein the verify voltage is one of threshold voltages included in the first distribution or is higher than the threshold voltages included in the first distribution.

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