Programming method of flash memory device

Details Programming method of flash memory device Programming method of flash memory device

2005-11-29

2005-11-29

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185190

Reexamination Certificate

active

06970384

ABSTRACT:
Provided is a programming method of a flash memory device. The method includes programming a memory cell for a first programming time, detecting whether or not the memory cell is programmed and terminating a first programming period when it is detected that the memory cell is programmed, determining whether or not the first programming period is terminated when it is detected that the memory cell is not programmed, repeating programming for a first programming time, detecting, and determining until the first programming period is terminated, programming the memory cell for a second programming time, detecting whether or not the memory cell is programmed and terminating a second programming period when it is detected that the memory cell is programmed, determining whether or not the second programming period is terminated when it is detected that the memory cell is not programmed, and repeating programming for a second programming time, detecting, and determining until the second programming time is terminated.

REFERENCES:
patent: 6028792 (2000-02-01), Tanaka et al.
patent: 6108238 (2000-08-01), Nakamura et al.
patent: 6212101 (2001-04-01), Lee
patent: 6459614 (2002-10-01), Miwa et al.
patent: 6538923 (2003-03-01), Parker

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