Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-01-30
2007-01-30
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
Reexamination Certificate
active
10971201
ABSTRACT:
A programming method of a non-volatile memory device includes a pre-program of the non-volatile memory device, and a main-program of the pre-programmed non-volatile memory device. The non-volatile memory device may include a tunnel dielectric layer, a charge storage layer, a blocking dielectric layer, and a gate electrode, which are sequentially stacked on a semiconductor substrate. The charge storage layer may be an electrically-floated conductive layer, or a dielectric layer having a trap site. By performing a main-program after performing a pre-program, to increase the threshold voltage of the non-volatile memory device, the program current can be effectively reduced.
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Bae Geum-Jong
Kim Ki-Chul
Kim Sang-Su
Koh Kwang-Wook
Lim Byou-Ree
Marger & Johnson & McCollom, P.C.
Samsung Electronis Co., Ltd.
Tran Anthan
Zarabian Amir
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