Programming method for flash memory capable of compensating...

Details Programming method for flash memory capable of compensating... Programming method for flash memory capable of compensating...

2006-09-18

2008-12-23

Lam, David (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185220, C365S185240

Reexamination Certificate

active

07468907

ABSTRACT:
A program method of a flash memory device including a plurality of memory cells for storing multi-bit data indicating one of states. The program method includes programming memory cells selected to have one of the states by using multi-bit data; detecting programmed memory cells within a predetermined region of a threshold voltage distribution where the programmed memory cells having the respective states are distributed, wherein the predetermined region of the respective states is selected by one of a first verify voltage and a read voltage and a second voltage, the first verify voltage being lower than the second verify voltage and higher than the read voltage; and programming the detected memory cells to have a threshold voltage being equivalent to or higher than the second verify voltage corresponding to each of the states.

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