Programming method and memory device using the same

Details Programming method and memory device using the same Programming method and memory device using the same

2010-11-10

2011-10-25

Dinh, Son (Department: 2824)

Static information storage and retrieval

Read/write circuit

Particular write circuit

C365S189120, C365S185220

Reexamination Certificate

active

08045403

ABSTRACT:
A programming method applied to a memory is provided. The memory includes a number of memory cells. The method includes the following steps. A target cell of the memory cells is programmed in response to a first programming command. The target cell is programmed in response to a second programming command.

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patent: 1703757 (2005-11-01), None
English language translation of abstract of CN 1703757 (published Nov. 30, 2005).

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