Programming method and initial charging method of...

Details Programming method and initial charging method of... Programming method and initial charging method of...

2009-09-28

2011-12-27

Dinh, Son (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S203000

Reexamination Certificate

active

08085601

ABSTRACT:
A programming method of a nonvolatile memory device includes precharging bit lines of the nonvolatile memory device based on loaded data, boosting channels corresponding to the respective precharged bit lines, after supplying word lines adjacent to a selected word line of the nonvolatile memory device with an initializing voltage, the selected word line is a word line selected for programming, and supplying a word line voltage for programming to the channels, after the channels are boosted.

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patent: 6667921 (2003-12-01), Park
patent: 7099193 (2006-08-01), Futatsuyama
patent: 2006/0239069 (2006-10-01), Kamigaichi et al.
patent: 2008/0089130 (2008-04-01), Park
patent: 2005-108404 (2005-04-01), None
patent: 2006-302411 (2006-11-01), None
patent: 1020050025907 (2005-03-01), None
patent: 1020060110799 (2006-10-01), None
patent: 100770754 (2007-10-01), None

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