Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-10-11
2008-03-18
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185180
Reexamination Certificate
active
07345924
ABSTRACT:
A target memory cell of a memory device is programmed by applying a programming voltage to a word line that includes the target memory cell, determining whether the target memory cell is programmed, and increasing the programming voltage by a step voltage if it is determined that the target memory cell is not programmed. An initial programming voltage and the step voltage are each selectable after fabrication of the memory device.
REFERENCES:
patent: 5440505 (1995-08-01), Fazio
patent: 6804150 (2004-10-01), Park et al.
patent: 6859397 (2005-02-01), Lutze et al.
patent: 2002/0114187 (2002-08-01), Choi et al.
patent: 2003/0135689 (2003-07-01), Fan
patent: 2004/0095807 (2004-05-01), Suh
patent: WO 2005/010638 (2005-02-01), None
Han Jin-Man
Louie Benjamin
Nazarian Hagop A.
Nguyen Dzung H.
Yip Aaron
Hoang Huan
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
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