Programming memory devices

Details Programming memory devices Programming memory devices

2007-09-11

2007-09-11

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185180, C365S185190

Reexamination Certificate

active

11126790

ABSTRACT:
A target memory cell of a memory device is programmed by applying a programming voltage to a word line that includes the target memory cell, determining whether the target memory cell is programmed, and increasing the programming voltage by a step voltage if it is determined that the target memory cell is not programmed. An initial programming voltage and the step voltage are each selectable after fabrication of the memory device.

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patent: 6804150 (2004-10-01), Park et al.
patent: 2002/0114187 (2002-08-01), Choi et al.
patent: 2003/0135689 (2003-07-01), Fan
patent: 2004/0095807 (2004-05-01), Suh
patent: 2005/0219896 (2005-10-01), Chen et al.
patent: WO 2005/010638 (2005-02-01), None

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