Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2006-06-19
2009-10-20
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189140, C365S189150, C365S189160, C365S185170, C365S185220
Reexamination Certificate
active
07606084
ABSTRACT:
Non-volatile memory read operations compensate for floating gate coupling when the apparent threshold voltage of a memory cell may have shifted. A memory cell of interest can be read using a reference value based on a level of charge read from a neighboring memory cell. Misreading the neighboring cell may have greater effects in particular programming methodologies, and more specifically, when reading the neighboring cell for particular states or charge levels in those methodologies. In one embodiment, memory cells are programmed to create a wider margin between particular states where misreading a neighboring cell is more detrimental. Further, memory cells are read in one embodiment by compensating for floating gate coupling based on the state of a neighboring cell when reading at certain reference levels but not when reading at other reference levels, such as those where a wider margin has been created.
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Le Thong Q
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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