Programming and reading five bits of data in two...

Static information storage and retrieval – Floating gate – Multiple values

Reexamination Certificate

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C365S185170, C365S185240, C365S185330, C365S184000

Reexamination Certificate

active

07911835

ABSTRACT:
Non-volatile memory devices and methods of programming the non-volatile memory devices use six threshold voltage levels. Data also may be read from the non-volatile memory devices. The non-volatile memory devices include a first non-volatile memory cell and a second non-volatile memory cell, each of which can be programmed with first through sixth threshold voltage levels that sequentially increase. Programming includes first, second and third data bit program operations. In the first and second data bit program operation, the first and second non-volatile memory cells are programmed with the first or second threshold voltage level in order to store first and second bits of data. In the third data bit program operation, the first non-volatile memory cell is programmed with the third or fourth threshold voltage level according to the first and second bits of the data in order to store a third bit of the data. Fourth and fifth data bit program operations also may be provided.

REFERENCES:
patent: 6259624 (2001-07-01), Nobukata
patent: 6530058 (2003-03-01), Visconti
patent: 6807610 (2004-10-01), Frayer
patent: 6816407 (2004-11-01), Rolandi
patent: 6996004 (2006-02-01), Fastow et al.
patent: 2006/0140011 (2006-06-01), Fong et al.
patent: 2009/0109746 (2009-04-01), Aritome

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