Programmable via devices with air gap isolation

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S004000, C257SE45002

Reexamination Certificate

active

07977203

ABSTRACT:
Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided. The programmable via device includes a first dielectric layer; a heater over the first dielectric layer; an air gap separating at least a portion of the heater from the first dielectric layer; an isolation layer over the first dielectric layer covering at least a portion of the heater; a capping layer over a side of the isolation layer opposite the first dielectric layer; at least one programmable via extending through the capping layer and at least a portion of the isolation layer and in contact with the heater, the programmable via including at least one phase change material; a conductive cap over the programmable via; a second dielectric layer over a side of the capping layer opposite the isolation layer; a first conductive via and a second conductive via, each extending through the second dielectric layer, the capping layer and at least a portion of the isolation layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive cap.

REFERENCES:
patent: 6795338 (2004-09-01), Parkinson et al.
patent: 6839263 (2005-01-01), Fricke et al.
patent: 6967344 (2005-11-01), Ovshinsky et al.
patent: 7057923 (2006-06-01), Furkay et al.
patent: 7214957 (2007-05-01), Ryoo et al.
patent: 7214958 (2007-05-01), Happ
patent: 7659534 (2010-02-01), Chen et al.
patent: 2006/0097240 (2006-05-01), Lowrey et al.
patent: 2006/0097343 (2006-05-01), Parkinson
patent: 2007/0057341 (2007-03-01), Pellizzer
patent: 2007/0096071 (2007-05-01), Kordus et al.
patent: 2007/0099405 (2007-05-01), Oliva et al.
K.N. Chen et al., Thermal Stress Evaluation of a PCRAM Material Ge2Sb2Te5, 21st IEEE Non-Volatile Semiconductor Memory Workshop, pp. 97-98 (2006).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Programmable via devices with air gap isolation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Programmable via devices with air gap isolation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programmable via devices with air gap isolation will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2623197

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.