Programmable threshold switchable resistive memory cell array

Details Programmable threshold switchable resistive memory cell array Programmable threshold switchable resistive memory cell array

1979-10-09

1980-11-25

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Amorphous

365205, G11C 1134

Patent

active

042362318

ABSTRACT:
A memory array wherein each memory cell includes a pair of threshold resistive elements which switch from a high to a low resistance state when a potential above their respective programmable thresholds is applied. A binary value is stored by creating a threshold difference between the two resistive elements using two different value current sources. The binary value stored is read by applying a ramp potential and determining which threshold resistive element switched states first using a sense latch.

REFERENCES:
patent: 3579204 (1971-05-01), Lincoln
patent: 3699543 (1972-10-01), Neale
patent: 4139911 (1979-02-01), Sciulli et al.
patent: 4180866 (1979-12-01), Shanks

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