Programmable semiconductor memory device

Details Programmable semiconductor memory device Programmable semiconductor memory device

2005-11-22

2009-10-27

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S189160

Reexamination Certificate

active

07609544

ABSTRACT:
The present invention provides a technology which can suppress a variation in a value after a write operation to minimum so as to facilitate multi-bit operation in a semiconductor device such as a phase change memory. A semiconductor device includes: a memory cell having a storage element (phase change material) that stores information depending on a state change by temperature; an I/O circuit; and means which, when writing data, performs a set operation and an operation for writing desired data, measures a resistance value of the storage element by means of a verify operation, and when the resistance value is not within a target range, performs the set operation and the write operation again while changing a voltage to be applied to the storage element.

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