Programmable semiconductor integrated circuits having fusible li

Details Programmable semiconductor integrated circuits having fusible li Programmable semiconductor integrated circuits having fusible li

1995-03-06

1995-11-07

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257173, 257665, 257904, H01L 2912, H01L 2702

Patent

active

054650046

ABSTRACT:
The size of a fusible link (22 C.sub.F) created from part of a metal layer (22) is controlled by an oxidation performed in a deposition chamber that is also used for depositing a dielectric layer (30) over the fuse structure. The metal layer serves as a diffusion barrier between semiconductor material (14 and 16) and another metal layer (24).

REFERENCES:
patent: 3380156 (1968-04-01), Lood et al.
patent: 4491860 (1985-01-01), Lim
patent: 4796075 (1989-01-01), Whitten
patent: 5017510 (1991-05-01), Welch et al.
patent: 5025300 (1991-06-01), Billig et al.

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