Programmable semi-fusible link read only memory and method...

Static information storage and retrieval – Read/write circuit – Having fuse element

Reexamination Certificate

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C365S201000

Reexamination Certificate

active

07136322

ABSTRACT:
A programmable read only memory includes a matrix of semi-fusible link memory cells, each including a semi-fusible link having an intact impedance and a blown impedance; a bit line voltage supply switching circuit for applying a current to at least one selected bit line; a word line address decoder for selecting a word line; and a program control logic circuit for blowing the semi-fusible links in the memory cells identified by the intersection of the selected word and bit lines; a method is disclosed of testing programmed and unprogrammed read only memory.

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patent: 2005/0067670 (2005-03-01), Hui
U.S. Appl. No. 10/777,337, filed Feb. 12, 2004, Denis Doyle.

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