Programmable resistance memory with feedback control

Details Programmable resistance memory with feedback control Programmable resistance memory with feedback control

2011-06-14

2011-06-14

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000

Reexamination Certificate

active

07961495

ABSTRACT:
A programmable resistance memory employs a feedback control circuit to regulate the programming current supplied to a selected programmable resistance memory element. The programmable resistance memory may be a phase change memory. The feedback control circuit monitors and controls the characteristics of a current pulse employed to program a memory cell.

REFERENCES:
patent: 2007/0121368 (2007-05-01), Gilbert

Affiliated with

Also associated with

Rating

Programmable resistance memory with feedback control does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Programmable resistance memory with feedback control, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programmable resistance memory with feedback control will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2660261