Programmable resistance memory with feedback control

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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Details

C365S163000

Reexamination Certificate

active

07961495

ABSTRACT:
A programmable resistance memory employs a feedback control circuit to regulate the programming current supplied to a selected programmable resistance memory element. The programmable resistance memory may be a phase change memory. The feedback control circuit monitors and controls the characteristics of a current pulse employed to program a memory cell.

REFERENCES:
patent: 2007/0121368 (2007-05-01), Gilbert

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