Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-06-14
2011-06-14
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S163000
Reexamination Certificate
active
07961495
ABSTRACT:
A programmable resistance memory employs a feedback control circuit to regulate the programming current supplied to a selected programmable resistance memory element. The programmable resistance memory may be a phase change memory. The feedback control circuit monitors and controls the characteristics of a current pulse employed to program a memory cell.
REFERENCES:
patent: 2007/0121368 (2007-05-01), Gilbert
Bray Kevin L.
Hoang Huan
Ovonyx Inc.
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