Programmable resistance memory element with layered memory...

Details Programmable resistance memory element with layered memory... Programmable resistance memory element with layered memory...

2005-03-29

2005-03-29

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000

Reexamination Certificate

active

06872963

ABSTRACT:
A programmable resistance memory element comprising alternating layers of programmable resistance material layers and stabilizing layers. The stabilizing layers may include metallic titanium or a titanium alloy. The stabilizing layers may include a telluride, such as titanium telluride.

REFERENCES:
patent: 6507061 (2003-01-01), Klersy et al.
patent: 6569705 (2003-05-01), Chiang et al.
patent: 6586761 (2003-07-01), Lowrey
patent: 20030155589 (2003-08-01), Campbell et al.

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