Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – active junction...
Reexamination Certificate
2005-11-29
2005-11-29
Wilson, Christian D. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, active junction...
C257S529000, C438S132000, C438S601000
Reexamination Certificate
active
06969869
ABSTRACT:
The semiconductor device comprising a chalcogenide phase change material. The chalcogenide material being programmed from one resistance state to another resistance state by applying a programming current to a resistor which is in thermal contact with the chalcogenide material. The semiconductor device may be used as memory element or as a programmable fuse.
REFERENCES:
patent: 4814853 (1989-03-01), Uchida
patent: 5210598 (1993-05-01), Nakazaki et al.
patent: 6284643 (2001-09-01), Reinberg
patent: 6448576 (2002-09-01), Davis et al.
patent: 6692994 (2004-02-01), Davis et al.
Davis John D.
Hudgens Steve
McIntyre Thomas J.
Rodgers John C.
Sturcken Keith K.
Ovonyx Inc.
Schlazer Philip H.
Siskind Marvin S.
Wilson Christian D.
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