Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-12-19
2010-11-16
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S004000, C438S900000, C365S148000
Reexamination Certificate
active
07834339
ABSTRACT:
The present invention relates to a memory cell comprising: a resistive structure; at least two electrodes coupled to the resistive structure, and at least one hydrogen reservoir structure, wherein the application of an electrical signal to one of the at least two electrodes causes the electrical resistance of the resistive structure to be modified by altering a hydrogen-ion concentration in the resistive structure.
REFERENCES:
patent: 4839700 (1989-06-01), Ramesham et al.
Bednorz Johannes G.
Joseph Eric A.
Karg Siegfried F.
Lam Chung H.
Meijer Gerhard I.
Buchenhorner Michael J.
International Business Machines - Corporation
Jackson, Jr. Jerome
Kaufman Stephen C.
LandOfFree
Programmable-resistance memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Programmable-resistance memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programmable-resistance memory cell will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4251176