Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-11-23
2010-02-02
Kebede, Brook (Department: 2894)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S800000, C977S938000
Reexamination Certificate
active
07655548
ABSTRACT:
Programmable power management using a nanotube structure is disclosed. In one embodiment, a method includes coupling a nanotube structure of an integrated circuit to a conductive surface when a command is processed, and enabling a group of transistors of the integrated circuit based on the coupling the nanotube structure to the conductive surface. A current may be applied to the nanotube structure to couple the nanotube structure to the conductive surface. The nanotube structure may be formed from a material chosen from one or more of a polymer, carbon, and a composite material. The group of transistors may be enabled during an activation sequence of the integrated circuit. In addition, one or more transistors of the group of transistors may be disengaged from the one or more power sources (e.g., to minimize leakage) when the nanotube structure is decoupled from the conductive surface.
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Actel Corporation; Power Sequencing and Management; Jun. 2006; 4 pgs; http://www.actel.com/documents/Fusion—Power—Sequencing—AB.pdf.
Abhyanker LLP Raj
Kebede Brook
LSI Corporation
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