Programmable nonvolatile memory and semiconductor integrated...

Details Programmable nonvolatile memory and semiconductor integrated... Programmable nonvolatile memory and semiconductor integrated...

2009-03-17

2010-10-12

Ha, Nathan W (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29255

Reexamination Certificate

active

07812389

ABSTRACT:
Distance λm between a floating gate and a drain contact of a floating gate transistor forming a memory cell is set to be greater than a distance λ determined based on a minimum design dimension between a control gate and a contact of a peripheral transistor. Data retention characteristics of a programmable memory which stores data in accordance with the amount of accumulated charges in the floating gate can be ensured without being affecting by mask misalignment or the like.

REFERENCES:
patent: 6376879 (2002-04-01), Mori et al.
patent: 6678190 (2004-01-01), Yang et al.
patent: 6914288 (2005-07-01), Itou et al.
patent: 6930348 (2005-08-01), Wang
patent: 6965143 (2005-11-01), Zheng et al.
patent: 2004/0065918 (2004-04-01), Katayama et al.
patent: 11-017156 (1999-01-01), None
patent: 2000-243926 (2000-09-01), None
patent: 2001-015617 (2001-01-01), None
patent: 2002-118177 (2002-04-01), None
patent: 2002-299475 (2002-10-01), None
patent: 2003-031701 (2003-01-01), None
patent: 2005-057111 (2005-03-01), None
Japanese Notice of Grounds of Rejection, w/ English translation thereof, issued in Japanese Patent Application No. JP 2005-132461 dated Jun. 22, 2010.

Affiliated with

Also associated with

Rating

Programmable nonvolatile memory and semiconductor integrated... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Programmable nonvolatile memory and semiconductor integrated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programmable nonvolatile memory and semiconductor integrated... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4149832