Programmable non-volatile semiconductor memory device

Details Programmable non-volatile semiconductor memory device Programmable non-volatile semiconductor memory device

2006-09-05

2006-09-05

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S100000, C365S225700, C365S185210

Reexamination Certificate

active

07102910

ABSTRACT:
The present invention relates to a programmable non-volatile semiconductor memory device comprising a matrix of rows and columns of memory cells (1). To reduce the required memory area a 3T memory cell is proposed comprising a bridge of two bridge transistors (MN0,MN1), preferably NMOS transistors, a read transistor, preferably an PMOS transistor, and a silicided polysilicium fuse resistor (R). The read transistors enable the use of a single sense line (SL) for all memory cells (1) of the same row or column in the matrix thus enabling the use of a common sense amplifier for sensing memory cells (1).

REFERENCES:
patent: 6859382 (2005-02-01), Rinerson et al.
patent: WO 2002/43152 (2001-11-01), None
patent: WO 2002/052647 (2001-12-01), None

Affiliated with

Also associated with

Rating

Programmable non-volatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Programmable non-volatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programmable non-volatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3581259