Programmable non-volatile memory (PNVM) device

Details Programmable non-volatile memory (PNVM) device Programmable non-volatile memory (PNVM) device

2011-02-01

2011-02-01

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29300

Reexamination Certificate

active

07880217

ABSTRACT:
A programmable non-volatile memory (PNVM) device and method of forming the same compatible with CMOS logic device processes to improve a process flow, the PNVM device including a semiconductor substrate active area; a gate dielectric on the active area; a floating gate electrode on the gate dielectric; an inter-gate dielectric disposed over the floating gate electrode; and, a control gate damascene electrode extending through a dielectric insulating layer in electrical communication with the inter-gate dielectric, the control gate damascene electrode disposed over an upper portion of the floating gate electrode.

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