Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
1995-07-25
1997-06-17
Nguyen, Viet Q.
Static information storage and retrieval
Systems using particular element
Semiconductive
36518501, 36518505, 36518514, 36518526, 36518905, G11C 1140
Patent
active
056403445
ABSTRACT:
A bidirectional passgate switch for connecting two conductors utilizes technology such as electrically erasable programmable read only memory (EEPROM). The switch includes two EEPROM components wherein the floating gates of the components are shared. In one embodiment a first n-channel passgate transistor is used for programming and storage of the state of the switch. The oxide of the first transistor is a thin oxide to enable ease of programming. A second n-channel passgate transistor functions as the bidirectional switch wherein the source and drain terminals are coupled to the routing lines to be selectively connected. The second transistor oxide is a thick oxide to minimize the leakage due to tunneling. Thus, the programming lines and routing lines are separated, making the programming process simpler while minimizing leakage.
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Ma Benny
Pani Peter M.
Ting Benjamin S.
BTR, Inc.
Nguyen Viet Q.
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