Programmable MOS device formed by hot carrier effect

Details Programmable MOS device formed by hot carrier effect Programmable MOS device formed by hot carrier effect

2006-05-30

2006-05-30

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Having fuse element

C365S096000

Reexamination Certificate

active

07054216

ABSTRACT:
A programmable metal-oxide-semiconductor (MOS) memory circuit and the method for programming same and disclosed. The circuit comprises a first N-type transistor having a gate region tied with a drain region and connectable to a first control voltage level, and a source region connected to a second voltage level; and a second N-type transistor having a gate region tied with a drain region and connectable to the first control voltage level, and a source region connected to the second voltage level, wherein the first and second control voltage levels are imposed to program either the first or second N-type transistor by causing a voltage difference between the drain region and the source region (Vds) and voltage difference between the gate region and the source region (Vgs) to be bigger than a predetermined threshold voltage to induce a hot carrier effect.

REFERENCES:
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patent: 6208549 (2001-03-01), Rao et al.
patent: 6436738 (2002-08-01), Yu
patent: 6445606 (2002-09-01), Khoury
patent: 6507087 (2003-01-01), Yu
patent: 6781916 (2004-08-01), McClure
patent: 6903436 (2005-06-01), Luo et al.
patent: 2005/0207223 (2005-09-01), Taheri et al.

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