Programmable memory device, integrated circuit including the...

Details Programmable memory device, integrated circuit including the... Programmable memory device, integrated circuit including the...

2007-08-21

2007-08-21

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S321000, C257SE29300

Reexamination Certificate

active

10799201

ABSTRACT:
An integrated circuit comprises a memory device including an isolation layer for defining an active area of a substrate, a tunnel oxide layer formed on the active area, a floating gate formed over the active area and the isolation layer, an inter-gate dielectric layer formed on the floating gate, and a control gate formed on the inter-gate dielectric layer. The integrated circuit also includes a high and low voltage transistors.

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