Programmable memory device circuit

Details Programmable memory device circuit Programmable memory device circuit

2006-11-01

2008-09-16

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S204000, C365S210110

Reexamination Certificate

active

07426131

ABSTRACT:
Circuits for writing, reading, and erasing a programmable metallization cell are disclosed. The programming circuits compensate for parasitic capacitance and/or parasitic resistance. The parasitic resistance and/or capacitance is compensated for using a feedback loop or a time current filter. Various circuits also measure a switching speed of the programmable metallization cell.

REFERENCES:
patent: 6597598 (2003-07-01), Tran et al.
patent: 7209379 (2007-04-01), Mori et al.

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